Show Hamamatsu Avalanche Photo Diode 1410015816
This is all the information about APD 1410015816. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1410015816 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B07 |
Break-through voltage: |
427 V |
Voltage for Gain 100 (T=+25°C): |
399 V |
Dark current: |
8.9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
293 |
Position in Box: |
12 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10207 |
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Shipment: |
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Grid number: |
390 |
Position in grid: |
1 |
Arrival for irradiation: |
11. Aug 2016 |
Sent for analysis after irradiation: |
02. Sep 2016 |
Return for assembly: |
06. Oct 2016 |
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Irradiation: |
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Date: |
23. Aug 2016 |
Dose used: |
30 Gy |
Temperature: |
25 °C |
Position: |
3 |
Bias voltage: |
350 V (connected) |
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Annealing: |
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Date: |
24. Aug 2016 |
Temperature: |
80 °C |
Duration: |
10 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 399.7576398 V T = -25 °C: 362.9964869 V |
Voltage for Gain 150: |
T = +20 °C: 407.6610183 V T = -25 °C: 370.7522964 V |
Voltage for Gain 200: |
T = +20 °C: 412.023155 V T = -25 °C: 375.0835266 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.640024901 V-1 T = -25 °C: 4.647148965 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.212374819 V-1 T = -25 °C: 9.264859256 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.43900434 V-1 T = -25 °C: 14.43614951 V-1 |
Break-through voltage: |
T = +20 °C: 427.3256195 V T = -25 °C: 390.7452707 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history