Show Hamamatsu Avalanche Photo Diode 1409015732
This is all the information about APD 1409015732. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1409015732 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B09 |
| Break-through voltage: |
422 V |
| Voltage for Gain 100 (T=+25°C): |
393.4 V |
| Dark current: |
5.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
307 |
| Position in Box: |
7 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10379 |
| |
|
| Shipment: |
|
| Grid number: |
386 |
| Position in grid: |
14 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
393.4 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 393.4935414 V T = -25 °C: 357.4102128 V |
| Voltage for Gain 150: |
T = +20 °C: 401.4045663 V T = -25 °C: 364.9965104 V |
| Voltage for Gain 200: |
T = +20 °C: 405.7932007 V T = -25 °C: 369.2473326 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.423878843 V-1 T = -25 °C: 4.690236732 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.65065626 V-1 T = -25 °C: 9.363944984 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.12683794 V-1 T = -25 °C: 14.69644887 V-1 |
| Break-through voltage: |
T = +20 °C: 421.1459525 V T = -25 °C: 384.5503989 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
