Show Hamamatsu Avalanche Photo Diode 1409015727
This is all the information about APD 1409015727. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1409015727 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A08 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
390 V |
| Dark current: |
7.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
307 |
| Position in Box: |
3 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10379 |
| |
|
| Shipment: |
|
| Grid number: |
386 |
| Position in grid: |
9 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
390 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.6232348 V T = -25 °C: 353.6018257 V |
| Voltage for Gain 150: |
T = +20 °C: 397.5657423 V T = -25 °C: 361.1265244 V |
| Voltage for Gain 200: |
T = +20 °C: 401.9519804 V T = -25 °C: 365.3599927 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.369319925 V-1 T = -25 °C: 4.63576762 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.451151472 V-1 T = -25 °C: 9.184581648 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.59320083 V-1 T = -25 °C: 14.39901122 V-1 |
| Break-through voltage: |
T = +20 °C: 415.8939856 V T = -25 °C: 379.1979499 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
