Show Hamamatsu Avalanche Photo Diode 1409015706
This is all the information about APD 1409015706. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1409015706 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C02 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
387.5 V |
| Dark current: |
7.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
33 |
| Position in Box: |
30 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10054 |
| |
|
| Shipment: |
|
| Grid number: |
385 |
| Position in grid: |
8 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.4049541 V T = -25 °C: 351.3461878 V |
| Voltage for Gain 150: |
T = +20 °C: 395.3851518 V T = -25 °C: 358.8761441 V |
| Voltage for Gain 200: |
T = +20 °C: 399.8278415 V T = -25 °C: 363.1228827 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.612285419 V-1 T = -25 °C: 4.610996049 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.922665131 V-1 T = -25 °C: 8.932827069 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.19645979 V-1 T = -25 °C: 15.24148567 V-1 |
| Break-through voltage: |
T = +20 °C: 413.7341318 V T = -25 °C: 377.2401847 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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| No characteristics available! |
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Progression of the current during irradiation
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Version history
