Show Hamamatsu Avalanche Photo Diode 1408015672
This is all the information about APD 1408015672. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1408015672 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1715019516/1408015672 |
| Unit: |
#3009 (barcode 1309033140) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G10 |
| Break-through voltage: |
423 V |
| Voltage for Gain 100 (T=+25°C): |
394.1 V |
| Dark current: |
5.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
306 |
| Position in Box: |
25 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10378 |
| |
|
| Shipment: |
|
| Grid number: |
383 |
| Position in grid: |
14 |
| Arrival for irradiation: |
02. Nov 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
394.1 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.5622072 V T = -25 °C: 358.1791629 V |
| Voltage for Gain 150: |
T = +20 °C: 402.4663138 V T = -25 °C: 365.8757334 V |
| Voltage for Gain 200: |
T = +20 °C: 406.840025 V T = -25 °C: 370.1994909 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.372818782 V-1 T = -25 °C: 4.647092563 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.498074424 V-1 T = -25 °C: 9.185469022 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.65465264 V-1 T = -25 °C: 14.21441058 V-1 |
| Break-through voltage: |
T = +20 °C: 421.712382 V T = -25 °C: 386.2072667 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
