Show Hamamatsu Avalanche Photo Diode 1408015667
This is all the information about APD 1408015667. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1408015667 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1408015667/1406015499 |
| Unit: |
#3002 (barcode 1309033072) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A10 |
| Break-through voltage: |
421 V |
| Voltage for Gain 100 (T=+25°C): |
395.2 V |
| Dark current: |
8.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
306 |
| Position in Box: |
22 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10377 |
| |
|
| Shipment: |
|
| Grid number: |
383 |
| Position in grid: |
9 |
| Arrival for irradiation: |
02. Nov 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
395.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.1868375 V T = -25 °C: 358.0510055 V |
| Voltage for Gain 150: |
T = +20 °C: 402.1797203 V T = -25 °C: 365.7388011 V |
| Voltage for Gain 200: |
T = +20 °C: 406.6184013 V T = -25 °C: 370.0489112 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.456824195 V-1 T = -25 °C: 4.728130621 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.645196016 V-1 T = -25 °C: 9.338544145 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.97758699 V-1 T = -25 °C: 14.54902215 V-1 |
| Break-through voltage: |
T = +20 °C: 420.6190613 V T = -25 °C: 384.5626908 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
