Show Hamamatsu Avalanche Photo Diode 1407015588
This is all the information about APD 1407015588. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1407015588 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C10 |
| Break-through voltage: |
420 V |
| Voltage for Gain 100 (T=+25°C): |
391.9 V |
| Dark current: |
5.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
348 |
| Position in Box: |
9 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10527 |
| |
|
| Shipment: |
|
| Grid number: |
379 |
| Position in grid: |
9 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 393.3772376 V T = -25 °C: 356.8245411 V |
| Voltage for Gain 150: |
T = +20 °C: 401.2276921 V T = -25 °C: 364.4257945 V |
| Voltage for Gain 200: |
T = +20 °C: 405.5490823 V T = -25 °C: 368.6748881 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.440573351 V-1 T = -25 °C: 4.823780141 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.702362407 V-1 T = -25 °C: 8.788889789 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.21242114 V-1 T = -25 °C: 15.3070383 V-1 |
| Break-through voltage: |
T = +20 °C: 420.0398185 V T = -25 °C: 383.5888031 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
