Show Hamamatsu Avalanche Photo Diode 1405015473
This is all the information about APD 1405015473. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1405015473 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E07 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
386.7 V |
| Dark current: |
4.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
347 |
| Position in Box: |
36 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10526 |
| |
|
| Shipment: |
|
| Grid number: |
374 |
| Position in grid: |
5 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.0446831 V T = -25 °C: 351.2408923 V |
| Voltage for Gain 150: |
T = +20 °C: 394.9539612 V T = -25 °C: 358.710551 V |
| Voltage for Gain 200: |
T = +20 °C: 399.3490378 V T = -25 °C: 362.9026221 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.546067358 V-1 T = -25 °C: 4.768597128 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.95038461 V-1 T = -25 °C: 9.624109655 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.88190662 V-1 T = -25 °C: 15.24059117 V-1 |
| Break-through voltage: |
T = +20 °C: 415.2443872 V T = -25 °C: 378.745935 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
