Show Hamamatsu Avalanche Photo Diode 1405015404
This is all the information about APD 1405015404. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1405015404 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C12 |
| Break-through voltage: |
423 V |
| Voltage for Gain 100 (T=+25°C): |
394.4 V |
| Dark current: |
5.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
374 |
| Position in Box: |
18 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10571 |
| |
|
| Shipment: |
|
| Grid number: |
371 |
| Position in grid: |
1 |
| Arrival for irradiation: |
11. Aug 2016 |
| Sent for analysis after irradiation: |
02. Sep 2016 |
| Return for assembly: |
06. Oct 2016 |
| |
|
| Irradiation: |
|
| Date: |
23. Aug 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
3 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
24. Aug 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 411.4154409 V T = -25 °C: 374.4222521 V |
| Voltage for Gain 150: |
T = +20 °C: 419.3494805 V T = -25 °C: 382.3211148 V |
| Voltage for Gain 200: |
T = +20 °C: 423.7541742 V T = -25 °C: 386.7135099 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.355362113 V-1 T = -25 °C: 4.418142175 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.517635552 V-1 T = -25 °C: 8.550022779 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.63460391 V-1 T = -25 °C: 14.79086036 V-1 |
| Break-through voltage: |
T = +20 °C: 439.3163935 V T = -25 °C: 402.8130687 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
