Show Hamamatsu Avalanche Photo Diode 1403015299
This is all the information about APD 1403015299. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1403015299 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C08 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
389 V |
| Dark current: |
9.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
339 |
| Position in Box: |
8 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10512 |
| |
|
| Shipment: |
|
| Grid number: |
366 |
| Position in grid: |
2 |
| Arrival for irradiation: |
20. Dec 2016 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.592422 V T = -25 °C: 353.4348456 V |
| Voltage for Gain 150: |
T = +20 °C: 397.5528751 V T = -25 °C: 360.9824719 V |
| Voltage for Gain 200: |
T = +20 °C: 401.9624503 V T = -25 °C: 365.2343521 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.363640556 V-1 T = -25 °C: 4.683793782 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.398127457 V-1 T = -25 °C: 9.306535723 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.48259684 V-1 T = -25 °C: 14.45284311 V-1 |
| Break-through voltage: |
T = +20 °C: 417.6774818 V T = -25 °C: 380.868709 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
