Show Hamamatsu Avalanche Photo Diode 1403015249
This is all the information about APD 1403015249. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1403015249 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C04 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
389.3 V |
| Dark current: |
9.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
308 |
| Position in Box: |
6 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10380 |
| |
|
| Shipment: |
|
| Grid number: |
363 |
| Position in grid: |
17 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
26. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
389.3 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.3353874 V T = -25 °C: 353.006008 V |
| Voltage for Gain 150: |
T = +20 °C: 397.2859275 V T = -25 °C: 360.6486761 V |
| Voltage for Gain 200: |
T = +20 °C: 401.698461 V T = -25 °C: 364.9514668 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.398489892 V-1 T = -25 °C: 4.766529384 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.553360792 V-1 T = -25 °C: 9.34222863 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.72561209 V-1 T = -25 °C: 14.60229411 V-1 |
| Break-through voltage: |
T = +20 °C: 417.0544816 V T = -25 °C: 380.5324065 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
