Show Hamamatsu Avalanche Photo Diode 1402015234
This is all the information about APD 1402015234. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1402015234 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D11 |
Break-through voltage: |
426 V |
Voltage for Gain 100 (T=+25°C): |
397.4 V |
Dark current: |
5.8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
307 |
Position in Box: |
43 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10380 |
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Shipment: |
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Grid number: |
363 |
Position in grid: |
3 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
26. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
397.4 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 398.4037619 V T = -25 °C: 361.6974705 V |
Voltage for Gain 150: |
T = +20 °C: 406.3081818 V T = -25 °C: 369.3916894 V |
Voltage for Gain 200: |
T = +20 °C: 410.6790312 V T = -25 °C: 373.6802019 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.432675728 V-1 T = -25 °C: 4.801077944 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.637903636 V-1 T = -25 °C: 8.736565017 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.03564617 V-1 T = -25 °C: 15.30313243 V-1 |
Break-through voltage: |
T = +20 °C: 426.2020993 V T = -25 °C: 389.2088607 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history