Show Hamamatsu Avalanche Photo Diode 1402015231
This is all the information about APD 1402015231. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1402015231 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D13 |
Break-through voltage: |
427 V |
Voltage for Gain 100 (T=+25°C): |
398.4 V |
Dark current: |
8.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
307 |
Position in Box: |
41 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10380 |
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Shipment: |
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Grid number: |
363 |
Position in grid: |
0 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
26. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
398.4 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 399.1770322 V T = -25 °C: 362.4724957 V |
Voltage for Gain 150: |
T = +20 °C: 407.0613113 V T = -25 °C: 370.1799614 V |
Voltage for Gain 200: |
T = +20 °C: 411.4332495 V T = -25 °C: 374.4869988 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.52663341 V-1 T = -25 °C: 4.538815768 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.901716061 V-1 T = -25 °C: 8.941947283 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.69196953 V-1 T = -25 °C: 15.7203428 V-1 |
Break-through voltage: |
T = +20 °C: 426.9415279 V T = -25 °C: 390.1606187 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history