Show Hamamatsu Avalanche Photo Diode 1402015213
This is all the information about APD 1402015213. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1402015213 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C03 |
Break-through voltage: |
425 V |
Voltage for Gain 100 (T=+25°C): |
396.8 V |
Dark current: |
6.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
284 |
Position in Box: |
21 |
EP1 batch: |
202 |
EP1 batch after irradiation: |
10434 |
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Shipment: |
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Grid number: |
362 |
Position in grid: |
3 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 396.6745795 V T = -25 °C: 360.2623604 V |
Voltage for Gain 150: |
T = +20 °C: 404.6609045 V T = -25 °C: 367.9544412 V |
Voltage for Gain 200: |
T = +20 °C: 409.086585 V T = -25 °C: 372.2791811 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.62665241 V-1 T = -25 °C: 4.626508089 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.10466855 V-1 T = -25 °C: 9.128422814 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.10199012 V-1 T = -25 °C: 14.11495535 V-1 |
Break-through voltage: |
T = +20 °C: 424.5812737 V T = -25 °C: 387.9255253 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history