Show Hamamatsu Avalanche Photo Diode 1402015192
This is all the information about APD 1402015192. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1402015192 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E10 |
Break-through voltage: |
424 V |
Voltage for Gain 100 (T=+25°C): |
395.7 V |
Dark current: |
5.7 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
356 |
Position in Box: |
43 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10542 |
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Shipment: |
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Grid number: |
361 |
Position in grid: |
2 |
Arrival for irradiation: |
19. Sep 2016 |
Sent for analysis after irradiation: |
30. Sep 2016 |
Return for assembly: |
02. Nov 2016 |
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Irradiation: |
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Date: |
28. Sep 2016 |
Dose used: |
36 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
350 V (connected) |
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Annealing: |
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Date: |
28. Sep 2016 |
Temperature: |
80 °C |
Duration: |
10 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 396.1743255 V T = -25 °C: 359.4857777 V |
Voltage for Gain 150: |
T = +20 °C: 404.1232959 V T = -25 °C: 367.1666196 V |
Voltage for Gain 200: |
T = +20 °C: 408.5314617 V T = -25 °C: 371.4779067 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.482938349 V-1 T = -25 °C: 4.563605674 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.751942091 V-1 T = -25 °C: 8.954273479 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.31908753 V-1 T = -25 °C: 15.79506672 V-1 |
Break-through voltage: |
T = +20 °C: 423.8319105 V T = -25 °C: 386.6935883 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history