Show Hamamatsu Avalanche Photo Diode 1401015155
This is all the information about APD 1401015155. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1401015155 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
H06 |
Break-through voltage: |
416 V |
Voltage for Gain 100 (T=+25°C): |
389.3 V |
Dark current: |
3.7 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
308 |
Position in Box: |
29 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10381 |
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Shipment: |
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Grid number: |
359 |
Position in grid: |
9 |
Arrival for irradiation: |
02. Nov 2017 |
Sent for analysis after irradiation: |
03. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
03. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
3 |
Bias voltage: |
389.3 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 391.1585432 V T = -25 °C: 355.0928729 V |
Voltage for Gain 150: |
T = +20 °C: 399.1040585 V T = -25 °C: 362.6977801 V |
Voltage for Gain 200: |
T = +20 °C: 403.5289214 V T = -25 °C: 366.9654909 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.49726828 V-1 T = -25 °C: 4.764311513 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.789567165 V-1 T = -25 °C: 9.49484369 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.34227925 V-1 T = -25 °C: 14.92810142 V-1 |
Break-through voltage: |
T = +20 °C: 412.5342292 V T = -25 °C: 380.8272571 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history