Show Hamamatsu Avalanche Photo Diode 1401015134
This is all the information about APD 1401015134. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1401015134 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
D03 |
Break-through voltage: |
426 V |
Voltage for Gain 100 (T=+25°C): |
396.8 V |
Dark current: |
6.8 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
308 |
Position in Box: |
14 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10381 |
|
|
Shipment: |
|
Grid number: |
358 |
Position in grid: |
8 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
20. Oct 2017 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
20. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
396.8 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 397.2831421 V T = -25 °C: 360.6278099 V |
Voltage for Gain 150: |
T = +20 °C: 405.2468935 V T = -25 °C: 368.3405284 V |
Voltage for Gain 200: |
T = +20 °C: 409.6735287 V T = -25 °C: 372.6703289 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.480670417 V-1 T = -25 °C: 4.571457359 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.748021578 V-1 T = -25 °C: 8.911995882 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.38661035 V-1 T = -25 °C: 15.70448776 V-1 |
Break-through voltage: |
T = +20 °C: 425.6235758 V T = -25 °C: 388.7945182 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history