Show Hamamatsu Avalanche Photo Diode 1401015102
This is all the information about APD 1401015102. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1401015102 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G11 |
| Break-through voltage: |
425 V |
| Voltage for Gain 100 (T=+25°C): |
396.5 V |
| Dark current: |
6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
32 |
| Position in Box: |
26 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10052 |
| |
|
| Shipment: |
|
| Grid number: |
356 |
| Position in grid: |
16 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 396.8385461 V T = -25 °C: 360.4942452 V |
| Voltage for Gain 150: |
T = +20 °C: 404.7834502 V T = -25 °C: 368.2749667 V |
| Voltage for Gain 200: |
T = +20 °C: 409.172551 V T = -25 °C: 372.6356394 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.478396226 V-1 T = -25 °C: 4.62070999 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.297498075 V-1 T = -25 °C: 8.640217562 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.86699372 V-1 T = -25 °C: 15.39706291 V-1 |
| Break-through voltage: |
T = +20 °C: 424.9000866 V T = -25 °C: 388.5175367 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
