Show Hamamatsu Avalanche Photo Diode 1320015076
This is all the information about APD 1320015076. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1320015076 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F09 |
Break-through voltage: |
440 V |
Voltage for Gain 100 (T=+25°C): |
412.1 V |
Dark current: |
8.9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
36 |
Position in Box: |
11 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10058 |
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Shipment: |
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Grid number: |
355 |
Position in grid: |
12 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
05. Dec 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
10. Dec 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 412.2895083 V T = -25 °C: 375.3222409 V |
Voltage for Gain 150: |
T = +20 °C: 420.3024563 V T = -25 °C: 383.2870894 V |
Voltage for Gain 200: |
T = +20 °C: 424.7556157 V T = -25 °C: 387.7350165 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.401219519 V-1 T = -25 °C: 4.632695714 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.98265849 V-1 T = -25 °C: 8.663410972 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.02287092 V-1 T = -25 °C: 15.3207244 V-1 |
Break-through voltage: |
T = +20 °C: 439.5043775 V T = -25 °C: 402.6023765 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history