Show Hamamatsu Avalanche Photo Diode 1320015049
This is all the information about APD 1320015049. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1320015049 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
D15 |
Break-through voltage: |
441 V |
Voltage for Gain 100 (T=+25°C): |
415.2 V |
Dark current: |
10 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
308 |
Position in Box: |
41 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10381 |
|
|
Shipment: |
|
Grid number: |
354 |
Position in grid: |
9 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
20. Oct 2017 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
19. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
415.2 V (not connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 415.3010299 V T = -25 °C: 378.7231796 V |
Voltage for Gain 150: |
T = +20 °C: 423.2182579 V T = -25 °C: 386.5699979 V |
Voltage for Gain 200: |
T = +20 °C: 427.5870775 V T = -25 °C: 390.8905011 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.4321552 V-1 T = -25 °C: 4.678810508 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.724384705 V-1 T = -25 °C: 9.382768942 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.23816927 V-1 T = -25 °C: 14.77652941 V-1 |
Break-through voltage: |
T = +20 °C: 439.9284611 V T = -25 °C: 404.2788635 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history