Show Hamamatsu Avalanche Photo Diode 1320015040
This is all the information about APD 1320015040. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1320015040 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D02 |
| Break-through voltage: |
447 V |
| Voltage for Gain 100 (T=+25°C): |
417.6 V |
| Dark current: |
8.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
356 |
| Position in Box: |
37 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10542 |
| |
|
| Shipment: |
|
| Grid number: |
354 |
| Position in grid: |
0 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
20. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
19. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
417.6 V (not connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 418.2012213 V T = -25 °C: 380.6561181 V |
| Voltage for Gain 150: |
T = +20 °C: 426.274211 V T = -25 °C: 388.654872 V |
| Voltage for Gain 200: |
T = +20 °C: 430.7223513 V T = -25 °C: 393.0923963 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.381689108 V-1 T = -25 °C: 4.305920431 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.851965699 V-1 T = -25 °C: 9.098524781 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.43813945 V-1 T = -25 °C: 14.11625299 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9938102 V T = -25 °C: 409.3287986 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
