Show Hamamatsu Avalanche Photo Diode 1320015005
This is all the information about APD 1320015005. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1320015005 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E04 |
Break-through voltage: |
442 V |
Voltage for Gain 100 (T=+25°C): |
413.8 V |
Dark current: |
6.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
285 |
Position in Box: |
10 |
EP1 batch: |
203 |
EP1 batch after irradiation: |
10435 |
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Shipment: |
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Grid number: |
352 |
Position in grid: |
16 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 414.363147 V T = -25 °C: 377.8812543 V |
Voltage for Gain 150: |
T = +20 °C: 422.3809645 V T = -25 °C: 385.7250729 V |
Voltage for Gain 200: |
T = +20 °C: 426.8252649 V T = -25 °C: 390.0755707 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.370649265 V-1 T = -25 °C: 4.618380329 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.456820498 V-1 T = -25 °C: 9.386157163 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.52450639 V-1 T = -25 °C: 14.38003607 V-1 |
Break-through voltage: |
T = +20 °C: 439.8999051 V T = -25 °C: 405.6299271 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history