Show Hamamatsu Avalanche Photo Diode 1320015004
This is all the information about APD 1320015004. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1320015004 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F03 |
| Break-through voltage: |
442 V |
| Voltage for Gain 100 (T=+25°C): |
413.1 V |
| Dark current: |
5.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
285 |
| Position in Box: |
9 |
| EP1 batch: |
203 |
| EP1 batch after irradiation: |
10435 |
| |
|
| Shipment: |
|
| Grid number: |
352 |
| Position in grid: |
15 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 414.8956913 V T = -25 °C: 377.5684417 V |
| Voltage for Gain 150: |
T = +20 °C: 422.5658804 V T = -25 °C: 385.5925073 V |
| Voltage for Gain 200: |
T = +20 °C: 427.2752613 V T = -25 °C: 389.7141339 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.848078199 V-1 T = -25 °C: 4.375810063 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.586967513 V-1 T = -25 °C: 9.125289381 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.66029306 V-1 T = -25 °C: 14.59442157 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9492829 V T = -25 °C: 405.3013724 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
