Show Hamamatsu Avalanche Photo Diode 1320015001
This is all the information about APD 1320015001. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1320015001 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G07 |
| Break-through voltage: |
440 V |
| Voltage for Gain 100 (T=+25°C): |
411.4 V |
| Dark current: |
7.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
285 |
| Position in Box: |
6 |
| EP1 batch: |
203 |
| EP1 batch after irradiation: |
10435 |
| |
|
| Shipment: |
|
| Grid number: |
352 |
| Position in grid: |
12 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 411.7987873 V T = -25 °C: 375.2051537 V |
| Voltage for Gain 150: |
T = +20 °C: 419.7813832 V T = -25 °C: 383.1110975 V |
| Voltage for Gain 200: |
T = +20 °C: 424.2230709 V T = -25 °C: 387.4732131 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.563881088 V-1 T = -25 °C: 4.609320723 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.962263647 V-1 T = -25 °C: 8.830599491 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.88947704 V-1 T = -25 °C: 15.45056851 V-1 |
| Break-through voltage: |
T = +20 °C: 439.739008 V T = -25 °C: 403.416784 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
