Show Hamamatsu Avalanche Photo Diode 1319014991
This is all the information about APD 1319014991. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1319014991 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
H08 |
Break-through voltage: |
434 V |
Voltage for Gain 100 (T=+25°C): |
407.2 V |
Dark current: |
5.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
284 |
Position in Box: |
46 |
EP1 batch: |
203 |
EP1 batch after irradiation: |
10435 |
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Shipment: |
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Grid number: |
352 |
Position in grid: |
2 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 408.065258 V T = -25 °C: 372.1912096 V |
Voltage for Gain 150: |
T = +20 °C: 416.1135913 V T = -25 °C: 380.2271518 V |
Voltage for Gain 200: |
T = +20 °C: 420.6092434 V T = -25 °C: 384.7006657 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.489847823 V-1 T = -25 °C: 4.515969014 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.953855781 V-1 T = -25 °C: 8.75463971 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.03870013 V-1 T = -25 °C: 14.7203717 V-1 |
Break-through voltage: |
T = +20 °C: 432.8687871 V T = -25 °C: 398.6873228 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history