Show Hamamatsu Avalanche Photo Diode 1319014983
This is all the information about APD 1319014983. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1319014983 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F10 |
Break-through voltage: |
438 V |
Voltage for Gain 100 (T=+25°C): |
409.9 V |
Dark current: |
7.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
292 |
Position in Box: |
32 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10206 |
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Shipment: |
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Grid number: |
351 |
Position in grid: |
14 |
Arrival for irradiation: |
11. Aug 2016 |
Sent for analysis after irradiation: |
02. Sep 2016 |
Return for assembly: |
06. Oct 2016 |
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Irradiation: |
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Date: |
23. Aug 2016 |
Dose used: |
30 Gy |
Temperature: |
25 °C |
Position: |
2 |
Bias voltage: |
350 V (connection unknown) |
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Annealing: |
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Date: |
24. Aug 2016 |
Temperature: |
80 °C |
Duration: |
10 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 410.3076647 V T = -25 °C: 373.5696786 V |
Voltage for Gain 150: |
T = +20 °C: 418.2700864 V T = -25 °C: 381.4569612 V |
Voltage for Gain 200: |
T = +20 °C: 422.6866548 V T = -25 °C: 385.8238812 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.434763074 V-1 T = -25 °C: 4.387773607 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.630486029 V-1 T = -25 °C: 8.545976314 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.97040983 V-1 T = -25 °C: 14.80900052 V-1 |
Break-through voltage: |
T = +20 °C: 437.9558554 V T = -25 °C: 401.3673833 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history