Show Hamamatsu Avalanche Photo Diode 1319014935
This is all the information about APD 1319014935. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1319014935 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C07 |
Break-through voltage: |
439 V |
Voltage for Gain 100 (T=+25°C): |
410.6 V |
Dark current: |
8.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
35 |
Position in Box: |
45 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10058 |
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Shipment: |
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Grid number: |
349 |
Position in grid: |
14 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
05. Dec 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
10. Dec 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 411.782555 V T = -25 °C: 374.7945288 V |
Voltage for Gain 150: |
T = +20 °C: 419.7170137 V T = -25 °C: 382.70874 V |
Voltage for Gain 200: |
T = +20 °C: 424.1275578 V T = -25 °C: 387.106118 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.300927799 V-1 T = -25 °C: 4.561625683 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.867515924 V-1 T = -25 °C: 8.558921783 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.11247113 V-1 T = -25 °C: 15.42197908 V-1 |
Break-through voltage: |
T = +20 °C: 438.7800195 V T = -25 °C: 401.8791202 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history