Show Hamamatsu Avalanche Photo Diode 1318014923
This is all the information about APD 1318014923. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1318014923 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D08 |
| Break-through voltage: |
438 V |
| Voltage for Gain 100 (T=+25°C): |
409.1 V |
| Dark current: |
8.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
35 |
| Position in Box: |
35 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10057 |
| |
|
| Shipment: |
|
| Grid number: |
349 |
| Position in grid: |
4 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
05. Dec 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
10. Dec 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 410.3943015 V T = -25 °C: 373.2077432 V |
| Voltage for Gain 150: |
T = +20 °C: 418.4412134 V T = -25 °C: 381.1417832 V |
| Voltage for Gain 200: |
T = +20 °C: 422.8470551 V T = -25 °C: 385.5842166 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.42184979 V-1 T = -25 °C: 4.30554289 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 7.952496411 V-1 T = -25 °C: 8.946217865 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.82796004 V-1 T = -25 °C: 14.80299509 V-1 |
| Break-through voltage: |
T = +20 °C: 437.4836847 V T = -25 °C: 400.3572998 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
