Show Hamamatsu Avalanche Photo Diode 1318014885
This is all the information about APD 1318014885. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1318014885 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
A07 |
Break-through voltage: |
448 V |
Voltage for Gain 100 (T=+25°C): |
419.2 V |
Dark current: |
7.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
341 |
Position in Box: |
7 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10516 |
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Shipment: |
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Grid number: |
347 |
Position in grid: |
7 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 419.6886945 V T = -25 °C: 383.0745977 V |
Voltage for Gain 150: |
T = +20 °C: 427.6325672 V T = -25 °C: 390.9455573 V |
Voltage for Gain 200: |
T = +20 °C: 432.0362328 V T = -25 °C: 395.3274047 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.321482797 V-1 T = -25 °C: 4.577728435 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.219283873 V-1 T = -25 °C: 9.025561945 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.37901602 V-1 T = -25 °C: 13.99203986 V-1 |
Break-through voltage: |
T = +20 °C: 440.0050058 V T = -25 °C: 411.388221 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history