Show Hamamatsu Avalanche Photo Diode 1318014871
This is all the information about APD 1318014871. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1318014871 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
F03 |
Break-through voltage: |
442 V |
Voltage for Gain 100 (T=+25°C): |
412.8 V |
Dark current: |
6.5 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
410 |
Position in Box: |
38 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10643 |
|
|
Shipment: |
|
Grid number: |
346 |
Position in grid: |
13 |
Arrival for irradiation: |
02. Nov 2017 |
Sent for analysis after irradiation: |
03. Nov 2017 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
03. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
412.8 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 413.5388107 V T = -25 °C: 377.0746883 V |
Voltage for Gain 150: |
T = +20 °C: 421.5548753 V T = -25 °C: 384.888403 V |
Voltage for Gain 200: |
T = +20 °C: 426.0074755 V T = -25 °C: 389.2845835 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.324890932 V-1 T = -25 °C: 4.597105989 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.34169488 V-1 T = -25 °C: 9.139980909 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.2054415 V-1 T = -25 °C: 13.99071917 V-1 |
Break-through voltage: |
T = +20 °C: 439.9691989 V T = -25 °C: 405.0647897 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history