Show Hamamatsu Avalanche Photo Diode 1317014828
This is all the information about APD 1317014828. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1317014828 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D02 |
| Break-through voltage: |
435 V |
| Voltage for Gain 100 (T=+25°C): |
405.9 V |
| Dark current: |
6.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
292 |
| Position in Box: |
13 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10206 |
| |
|
| Shipment: |
|
| Grid number: |
344 |
| Position in grid: |
16 |
| Arrival for irradiation: |
02. Nov 2016 |
| Sent for analysis after irradiation: |
10. Nov 2016 |
| Return for assembly: |
20. Dec 2016 |
| |
|
| Irradiation: |
|
| Date: |
04. Nov 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 406.7232383 V T = -25 °C: 369.9245965 V |
| Voltage for Gain 150: |
T = +20 °C: 414.6702212 V T = -25 °C: 377.7805143 V |
| Voltage for Gain 200: |
T = +20 °C: 419.0677096 V T = -25 °C: 382.1410376 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.308215859 V-1 T = -25 °C: 4.621848127 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.211417836 V-1 T = -25 °C: 9.195757545 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.34985587 V-1 T = -25 °C: 14.35968153 V-1 |
| Break-through voltage: |
T = +20 °C: 434.2241406 V T = -25 °C: 397.8095398 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
