Show Hamamatsu Avalanche Photo Diode 1317014816
This is all the information about APD 1317014816. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1317014816 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
A06 |
Break-through voltage: |
440 V |
Voltage for Gain 100 (T=+25°C): |
411.9 V |
Dark current: |
7.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
292 |
Position in Box: |
7 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10205 |
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Shipment: |
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Grid number: |
344 |
Position in grid: |
7 |
Arrival for irradiation: |
02. Nov 2016 |
Sent for analysis after irradiation: |
10. Nov 2016 |
Return for assembly: |
20. Dec 2016 |
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Irradiation: |
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Date: |
04. Nov 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
350 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 411.8551173 V T = -25 °C: 375.0985383 V |
Voltage for Gain 150: |
T = +20 °C: 419.816101 V T = -25 °C: 383.0637975 V |
Voltage for Gain 200: |
T = +20 °C: 424.2275134 V T = -25 °C: 387.4918675 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.591936128 V-1 T = -25 °C: 4.5285062 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.042450824 V-1 T = -25 °C: 8.743566812 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.95358716 V-1 T = -25 °C: 15.26230951 V-1 |
Break-through voltage: |
T = +20 °C: 438.3210143 V T = -25 °C: 402.7755676 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history