Show Hamamatsu Avalanche Photo Diode 1316014742
This is all the information about APD 1316014742. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1316014742 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D15 |
Break-through voltage: |
442 V |
Voltage for Gain 100 (T=+25°C): |
416.5 V |
Dark current: |
7.9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
416 |
Position in Box: |
28 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10652 |
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Shipment: |
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Grid number: |
341 |
Position in grid: |
16 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
20. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
20. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
1 |
Bias voltage: |
416.5 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 416.5292212 V T = -25 °C: 380.060036 V |
Voltage for Gain 150: |
T = +20 °C: 424.5463128 V T = -25 °C: 387.8931863 V |
Voltage for Gain 200: |
T = +20 °C: 428.9627151 V T = -25 °C: 392.2241766 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.360589009 V-1 T = -25 °C: 4.781448121 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.367110132 V-1 T = -25 °C: 8.991788969 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.5381828 V-1 T = -25 °C: 14.3002177 V-1 |
Break-through voltage: |
T = +20 °C: 439.8914869 V T = -25 °C: 405.3672567 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history