Show Hamamatsu Avalanche Photo Diode 1316014714
This is all the information about APD 1316014714. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1316014714 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D06 |
| Break-through voltage: |
439 V |
| Voltage for Gain 100 (T=+25°C): |
410.9 V |
| Dark current: |
7.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
362 |
| Position in Box: |
9 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10554 |
| |
|
| Shipment: |
|
| Grid number: |
340 |
| Position in grid: |
10 |
| Arrival for irradiation: |
02. Nov 2017 |
| Sent for analysis after irradiation: |
23. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
410.9 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 411.6017883 V T = -25 °C: 374.2165708 V |
| Voltage for Gain 150: |
T = +20 °C: 419.5936657 V T = -25 °C: 382.1942097 V |
| Voltage for Gain 200: |
T = +20 °C: 424.0111649 V T = -25 °C: 386.6226373 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.325187064 V-1 T = -25 °C: 4.435447212 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.158495108 V-1 T = -25 °C: 8.641144576 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.23941739 V-1 T = -25 °C: 15.00295871 V-1 |
| Break-through voltage: |
T = +20 °C: 438.9159695 V T = -25 °C: 402.1388985 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
