Show Hamamatsu Avalanche Photo Diode 1316014691
This is all the information about APD 1316014691. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1316014691 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C02 |
Break-through voltage: |
445 V |
Voltage for Gain 100 (T=+25°C): |
416.1 V |
Dark current: |
7.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
341 |
Position in Box: |
41 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10517 |
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Shipment: |
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Grid number: |
339 |
Position in grid: |
7 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 416.2507054 V T = -25 °C: 379.6459712 V |
Voltage for Gain 150: |
T = +20 °C: 424.3066342 V T = -25 °C: 387.7766885 V |
Voltage for Gain 200: |
T = +20 °C: 428.7645456 V T = -25 °C: 392.3188505 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.402410239 V-1 T = -25 °C: 4.257590924 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.580955112 V-1 T = -25 °C: 8.908699368 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.79730909 V-1 T = -25 °C: 13.46387369 V-1 |
Break-through voltage: |
T = +20 °C: 439.9879569 V T = -25 °C: 408.7070167 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history