Show Hamamatsu Avalanche Photo Diode 1315014678
This is all the information about APD 1315014678. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1315014678 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F14 |
Break-through voltage: |
446 V |
Voltage for Gain 100 (T=+25°C): |
417.4 V |
Dark current: |
9.9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
35 |
Position in Box: |
27 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10057 |
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Shipment: |
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Grid number: |
338 |
Position in grid: |
16 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
05. Dec 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
10. Dec 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 418.0782112 V T = -25 °C: 381.0975313 V |
Voltage for Gain 150: |
T = +20 °C: 426.0844277 V T = -25 °C: 389.0532912 V |
Voltage for Gain 200: |
T = +20 °C: 430.5209748 V T = -25 °C: 393.4898108 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.41754168 V-1 T = -25 °C: 4.421567303 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.490049451 V-1 T = -25 °C: 8.323841369 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.0069941 V-1 T = -25 °C: 13.87135628 V-1 |
Break-through voltage: |
T = +20 °C: 439.8064321 V T = -25 °C: 409.3018951 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history