Show Hamamatsu Avalanche Photo Diode 1315014669
This is all the information about APD 1315014669. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1315014669 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F12 |
Break-through voltage: |
440 V |
Voltage for Gain 100 (T=+25°C): |
415.4 V |
Dark current: |
7.8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
35 |
Position in Box: |
21 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10057 |
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Shipment: |
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Grid number: |
338 |
Position in grid: |
8 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
05. Dec 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
10. Dec 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 416.0581328 V T = -25 °C: 379.2195269 V |
Voltage for Gain 150: |
T = +20 °C: 423.9951427 V T = -25 °C: 387.0561581 V |
Voltage for Gain 200: |
T = +20 °C: 428.3941419 V T = -25 °C: 391.453976 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.389746606 V-1 T = -25 °C: 4.580031436 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.288677408 V-1 T = -25 °C: 9.12690844 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.1661318 V-1 T = -25 °C: 14.79383386 V-1 |
Break-through voltage: |
T = +20 °C: 439.8721921 V T = -25 °C: 407.1423158 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history