Show Hamamatsu Avalanche Photo Diode 1315014660
This is all the information about APD 1315014660. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1315014660 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E12 |
| Break-through voltage: |
444 V |
| Voltage for Gain 100 (T=+25°C): |
415.5 V |
| Dark current: |
8.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
35 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10057 |
| |
|
| Shipment: |
|
| Grid number: |
338 |
| Position in grid: |
2 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
05. Dec 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
10. Dec 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 415.9639781 V T = -25 °C: 379.5205276 V |
| Voltage for Gain 150: |
T = +20 °C: 423.996716 V T = -25 °C: 387.4983926 V |
| Voltage for Gain 200: |
T = +20 °C: 428.4405163 V T = -25 °C: 391.8609481 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.539698143 V-1 T = -25 °C: 4.482875973 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.164915673 V-1 T = -25 °C: 8.206449971 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.01564959 V-1 T = -25 °C: 19.3901811 V-1 |
| Break-through voltage: |
T = +20 °C: 439.8180757 V T = -25 °C: 406.7954264 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
