Show Hamamatsu Avalanche Photo Diode 1315014649
This is all the information about APD 1315014649. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1315014649 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
A08 |
Break-through voltage: |
443 V |
Voltage for Gain 100 (T=+25°C): |
414.4 V |
Dark current: |
9.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
291 |
Position in Box: |
50 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10205 |
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Shipment: |
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Grid number: |
337 |
Position in grid: |
13 |
Arrival for irradiation: |
27. Oct 2016 |
Sent for analysis after irradiation: |
02. Nov 2016 |
Return for assembly: |
09. Dec 2016 |
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Irradiation: |
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Date: |
31. Oct 2016 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
350 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 414.7476777 V T = -25 °C: 378.1568117 V |
Voltage for Gain 150: |
T = +20 °C: 422.6718027 V T = -25 °C: 385.9878201 V |
Voltage for Gain 200: |
T = +20 °C: 427.0701199 V T = -25 °C: 390.3460199 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.590924728 V-1 T = -25 °C: 4.536193967 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.043681921 V-1 T = -25 °C: 8.906055957 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.12358926 V-1 T = -25 °C: 15.6191443 V-1 |
Break-through voltage: |
T = +20 °C: 436.6027082 V T = -25 °C: 405.9963183 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history