Show Hamamatsu Avalanche Photo Diode 1315014642
This is all the information about APD 1315014642. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1315014642 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F07 |
| Break-through voltage: |
435 V |
| Voltage for Gain 100 (T=+25°C): |
407.2 V |
| Dark current: |
7.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
292 |
| Position in Box: |
49 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10207 |
| |
|
| Shipment: |
|
| Grid number: |
337 |
| Position in grid: |
6 |
| Arrival for irradiation: |
27. Oct 2016 |
| Sent for analysis after irradiation: |
02. Nov 2016 |
| Return for assembly: |
09. Dec 2016 |
| |
|
| Irradiation: |
|
| Date: |
31. Oct 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
350 V (not connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 407.6601917 V T = -25 °C: 370.7463108 V |
| Voltage for Gain 150: |
T = +20 °C: 415.563077 V T = -25 °C: 378.5717806 V |
| Voltage for Gain 200: |
T = +20 °C: 419.9289692 V T = -25 °C: 382.9040576 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.348461837 V-1 T = -25 °C: 4.695431275 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.426971038 V-1 T = -25 °C: 9.419617794 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.67853617 V-1 T = -25 °C: 14.74215073 V-1 |
| Break-through voltage: |
T = +20 °C: 435.2933064 V T = -25 °C: 398.5540598 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
