Show Hamamatsu Avalanche Photo Diode 1315014634
This is all the information about APD 1315014634. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1315014634 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D12 |
Break-through voltage: |
445 V |
Voltage for Gain 100 (T=+25°C): |
416.5 V |
Dark current: |
11.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
289 |
Position in Box: |
38 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10201 |
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Shipment: |
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Grid number: |
336 |
Position in grid: |
19 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
22. Feb 2018 |
Dose used: |
30 Gy |
Temperature: |
25 °C |
Position: |
4 |
Bias voltage: |
0 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 417.1566497 V T = -25 °C: 380.2661835 V |
Voltage for Gain 150: |
T = +20 °C: 425.1258977 V T = -25 °C: 388.1993451 V |
Voltage for Gain 200: |
T = +20 °C: 429.5520282 V T = -25 °C: 392.6060746 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.471799032 V-1 T = -25 °C: 4.484645734 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.787320341 V-1 T = -25 °C: 8.750737441 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.27775373 V-1 T = -25 °C: 15.23578284 V-1 |
Break-through voltage: |
T = +20 °C: 439.9880175 V T = -25 °C: 408.2427442 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history