Show Hamamatsu Avalanche Photo Diode 1315014632
This is all the information about APD 1315014632. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1315014632 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D05 |
Break-through voltage: |
434 V |
Voltage for Gain 100 (T=+25°C): |
407.9 V |
Dark current: |
12.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
289 |
Position in Box: |
36 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10201 |
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Shipment: |
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Grid number: |
336 |
Position in grid: |
17 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
22. Feb 2018 |
Dose used: |
30 Gy |
Temperature: |
25 °C |
Position: |
4 |
Bias voltage: |
0 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 408.5362796 V T = -25 °C: 371.730584 V |
Voltage for Gain 150: |
T = +20 °C: 416.5032083 V T = -25 °C: 379.6297704 V |
Voltage for Gain 200: |
T = +20 °C: 420.9079396 V T = -25 °C: 384.0038038 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.347447422 V-1 T = -25 °C: 4.362285327 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.455184951 V-1 T = -25 °C: 9.332054557 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.57060163 V-1 T = -25 °C: 14.48485452 V-1 |
Break-through voltage: |
T = +20 °C: 435.9814472 V T = -25 °C: 399.3904414 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history