Show Hamamatsu Avalanche Photo Diode 1315014622
This is all the information about APD 1315014622. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1315014622 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F05 |
| Break-through voltage: |
435 V |
| Voltage for Gain 100 (T=+25°C): |
406.6 V |
| Dark current: |
7.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
288 |
| Position in Box: |
2 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10199 |
| |
|
| Shipment: |
|
| Grid number: |
336 |
| Position in grid: |
7 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Feb 2018 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
4 |
| Bias voltage: |
0 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 406.8027763 V T = -25 °C: 370.3919731 V |
| Voltage for Gain 150: |
T = +20 °C: 414.7456566 V T = -25 °C: 378.1991057 V |
| Voltage for Gain 200: |
T = +20 °C: 419.1344412 V T = -25 °C: 382.5415736 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.652220134 V-1 T = -25 °C: 4.531439887 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.25466807 V-1 T = -25 °C: 8.947311058 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.54406924 V-1 T = -25 °C: 14.03300697 V-1 |
| Break-through voltage: |
T = +20 °C: 428.8043894 V T = -25 °C: 398.5044566 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
