Show Hamamatsu Avalanche Photo Diode 0708006109
This is all the information about APD 0708006109. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0708006109 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F02 |
| Break-through voltage: |
405 V |
| Voltage for Gain 100 (T=+25°C): |
377.4 V |
| Dark current: |
11.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
433 |
| Position in Box: |
47 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10660 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.6074432 V T = -25 °C: 342.8479715 V |
| Voltage for Gain 150: |
T = +20 °C: 385.4732808 V T = -25 °C: 350.1030477 V |
| Voltage for Gain 200: |
T = +20 °C: 389.8340261 V T = -25 °C: 354.1912674 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.38649854 V-1 T = -25 °C: 5.047409937 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.524933445 V-1 T = -25 °C: 9.448933493 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.68911261 V-1 T = -25 °C: 14.97336888 V-1 |
| Break-through voltage: |
T = +20 °C: 395.5895822 V T = -25 °C: 368.8408174 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
