Show Hamamatsu Avalanche Photo Diode 0916010197
This is all the information about APD 0916010197. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0916010197 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Giessen (mounted in Slice) |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G04 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
380.1 V |
Dark current: |
3.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
none |
Position in Box: |
none |
EP1 batch: |
none |
EP1 batch after irradiation: |
none |
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Shipment: |
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Grid number: |
228 |
Position in grid: |
2 |
Arrival for irradiation: |
15. Jun 2016 |
Sent for analysis after irradiation: |
23. Jun 2016 |
Return for assembly: |
04. Aug 2016 |
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Irradiation: |
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Date: |
20. Jun 2016 |
Dose used: |
30 Gy |
Temperature: |
25 °C |
Position: |
3 |
Bias voltage: |
320 V (connection unknown) |
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Annealing: |
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Date: |
20. Jun 2016 |
Temperature: |
80 °C |
Duration: |
8 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: none T = -25 °C: none |
Voltage for Gain 150: |
T = +20 °C: none T = -25 °C: none |
Voltage for Gain 200: |
T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 100: |
T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 150: |
T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 200: |
T = +20 °C: none T = -25 °C: none |
Break-through voltage: |
T = +20 °C: none T = -25 °C: none |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history