Show Hamamatsu Avalanche Photo Diode 0916010163
This is all the information about APD 0916010163. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0916010163 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D01 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
382.2 V |
Dark current: |
4.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
342 |
Position in Box: |
20 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10518 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 382.2751613 V T = -25 °C: 346.9104485 V |
Voltage for Gain 150: |
T = +20 °C: 390.1891941 V T = -25 °C: 354.2780848 V |
Voltage for Gain 200: |
T = +20 °C: 394.599177 V T = -25 °C: 358.4270321 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.476322335 V-1 T = -25 °C: 5.00116424 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.732185255 V-1 T = -25 °C: 9.263881969 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.1289268 V-1 T = -25 °C: 16.46675383 V-1 |
Break-through voltage: |
T = +20 °C: 409.2364805 V T = -25 °C: 372.7603419 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history