Show Hamamatsu Avalanche Photo Diode 0912009868
This is all the information about APD 0912009868. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0912009868 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F11 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
389.3 V |
| Dark current: |
4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
347 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10526 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.3283401 V T = -25 °C: 353.099915 V |
| Voltage for Gain 150: |
T = +20 °C: 397.2109397 V T = -25 °C: 360.6901242 V |
| Voltage for Gain 200: |
T = +20 °C: 401.5788738 V T = -25 °C: 364.9330701 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.496028337 V-1 T = -25 °C: 4.79484906 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.839304707 V-1 T = -25 °C: 9.578400912 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.50583252 V-1 T = -25 °C: 15.13982186 V-1 |
| Break-through voltage: |
T = +20 °C: 416.217179 V T = -25 °C: 380.1259161 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
