Show Hamamatsu Avalanche Photo Diode 0912009854
This is all the information about APD 0912009854. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
0912009854 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2003021685/0912009854 |
Unit: |
#1903 (barcode 1309022212) |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
red |
|
|
Manufacturer information: |
|
Wafer position: |
C02 |
Break-through voltage: |
412 V |
Voltage for Gain 100 (T=+25°C): |
384.7 V |
Dark current: |
3 nA |
|
|
Screening Logistics: |
|
Available: |
No |
Storage Box: |
347 |
Position in Box: |
2 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10525 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 384.3485047 V T = -25 °C: 348.7260994 V |
Voltage for Gain 150: |
T = +20 °C: 392.2591742 V T = -25 °C: 356.1662279 V |
Voltage for Gain 200: |
T = +20 °C: 396.6553887 V T = -25 °C: 360.3685295 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.442992127 V-1 T = -25 °C: 4.627583011 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.776576158 V-1 T = -25 °C: 9.210224673 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.16503323 V-1 T = -25 °C: 14.50611709 V-1 |
Break-through voltage: |
T = +20 °C: 410.6431909 V T = -25 °C: 375.5529355 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history