Show Hamamatsu Avalanche Photo Diode 2201023695
This is all the information about APD 2201023695. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2201023695 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G11 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
382.1 V |
| Dark current: |
5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
373 |
| Position in Box: |
49 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10570 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.4590472 V T = -25 °C: 346.8221723 V |
| Voltage for Gain 150: |
T = +20 °C: 390.2524305 V T = -25 °C: 354.2293867 V |
| Voltage for Gain 200: |
T = +20 °C: 394.6253841 V T = -25 °C: 358.3808525 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.404778973 V-1 T = -25 °C: 4.965248242 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.733512315 V-1 T = -25 °C: 9.360843464 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.32911379 V-1 T = -25 °C: 14.66147713 V-1 |
| Break-through voltage: |
T = +20 °C: 405.7344355 V T = -25 °C: 373.7119016 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
