Show Hamamatsu Avalanche Photo Diode 2020022799
This is all the information about APD 2020022799. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2020022799 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
D09 |
Break-through voltage: |
400 V |
Voltage for Gain 100 (T=+25°C): |
372.2 V |
Dark current: |
14.5 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
354 |
Position in Box: |
4 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10537 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 372.3783739 V T = -25 °C: 338.7884732 V |
Voltage for Gain 150: |
T = +20 °C: 379.9101839 V T = -25 °C: 345.7794365 V |
Voltage for Gain 200: |
T = +20 °C: 384.136723 V T = -25 °C: 349.708053 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.699820925 V-1 T = -25 °C: 5.276298357 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.381035897 V-1 T = -25 °C: 10.25369486 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.6914721 V-1 T = -25 °C: 16.60358233 V-1 |
Break-through voltage: |
T = +20 °C: 399.3739287 V T = -25 °C: 364.0860025 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history